A 12.5Gb/s electro-absorption-modulator driver using a cascode switch with dynamic biasing and adaptive RC compensation

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2005, Pages 98-102

  Maxim, A ^a  

^a Maxim   (United States)

Author keywords

BICMOS; Electro absorption modulators; Laser drivers; Optical communications; SiGe

Indexed keywords

ELECTRO-ABSORPTION MODULATORS; LASER DRIVERS; OPTICAL COMMUNICATIONS; SIGE;

ELECTRIC LOADS; MICROPROCESSOR CHIPS; SWITCHING;

MODULATORS;

EID: 27944452310     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. H. Ransijn et al, "A 10Gb/s laser/modulator driver IC with a dual-mode actively matched output buffer", IEEE JSSC vol.36, no.9, pp. 1314-1320, September 2001.
2. M. Meghelli et al, "High power and high speed InP DHBT driver IC's for laser modulation", IEEE JSSC, vol.33, no.9, pp.1411-1416, September 1998.
3. H.M.Rein et al, "A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10Gb/s optical fiber link", IEEE JSSC, vol.29, no.9, pp. 1014-1021, September 1994.
4. R. Schmid et al, "40Gb/s EAM driver IC in SiGe bipolar", Electronics Letters, vol.34, no.11,pp.1095-1097,May 1998.
5. A. Maxim, "A 10Gb/s SiGe compact laser diode driver using push-pull emitter followers and Miller compensated output switch", ESSCIRC 2003 Conference, pp557-560.