High power and high speed InP DHBT driver IC's for laser modulation

IEEE Journal of Solid-State Circuits

Volumn 33, Issue 9, 1998, Pages 1411-1416

  Meghelli, Mounir ^a,b   Bouché, Michel ^a,c,e,f   Konczykowska, Agnieszka ^a,d  

^a ORANGE LABS   (France)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c STMICROELECTRONICS   (France)

^d IEEE

^e UNIVERSITÉ PARIS SACLAY   (France)

^f SGS Thomson Central R and D   (France)

Author keywords

Driver circuit; Heterojunction bipolar transistor; Indium phosphide; Integrated circuits; Optical communications

Indexed keywords

EID: 0005073351     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.711340     Document Type: Article

References (12)

1. F. Devaux, P. Bordes, A. Ougazzaden, M. Carré, and F. Huet, "Experimental optimization of MQW electroabsorption modulators with up to 40 GHz bandwidths," Electron. Lett., vol. 30, no. 16, pp. 1347-1348, 1994.
2. R. Schmid, T. F. Meister, M. Neuhäuser, A. Felder, W. Bogner, M. Rest, J. Rupeter, and H. M. Rein, "20 Gb/s transimpedance preamplifier and modulator driver in SiGe bipolar technology," Electron. Lett., vol. 33, no. 13, pp. 1136-1137, 1997.
3. J. Akagi, Y. Kuriyama, M. Asaka, T. Sugiyama, N. Lizuka, K. Tsuda, and M. Obara, "Five AlGaAs/GaAs HBT IC's for 20 Gb/s optical repeater," in Proc. IEEE Int. Solid-State Circuits Conf., 1994, pp. 168-169.
4. Z. Lao, U. Nowotny, M. Schlechtweg, V. Hurm, W. Bronner, J. Hornung, M. Rieger-Motzer, G. Kaufel, K. Köhler, and A. Hülsmann, "High power modulator driver IC's up to 30 Gb/s with AlGaAs/GaAs HEMT's," in Proc. IEEE GaAs IC Symposium, Tech. Dig. Papers, 1997, pp. 223-226.
5. R. Bauknecht, H.-P. Schneibel, J. Schmid, and H. Melchior, "A 12 Gb/s laser and optical modulator driver circuit with InGaAs/InP double heterojunction bipolar transistors," in Proc. IPRM Conf., 1996, pp. 61-63.
6. P. Launay, D. Caffin, A. M. Duchenois, and F. Héliot, "A double InGaAs/InP HBT technology for lightwave communication circuits design," in Proc. IPRM Conf., 1996, pp. 701-703.
7. M. Mokhtari, T. Swahn, R. H. Walden, W. E. Stanchina, M. Kardos, T. Juhola, G. Schuppener, H. Tenhunen, and T. Lewin, "InP-HBT chip-set for 40-Gb/s fiber optical communication systems operational at 3 V," IEEE J. Solid-State Circuits, vol. 32, pp. 1371-1382, Sept. 1997.
8. J. Hauenschild and H. M. Rein, "Influence of transmission-line interconnections between gigabit-per-second IC's on time jitter and instabilities," IEEE J. Solid-State Circuits, vol. 25, pp. 763-766, June 1990.
9. M. Meghelli, M. Bouche, and A. Konczykowska, "Very high speed integrated circuits: Design methodology and applications for optical communications," in Proc. ECCTD, Budapest, Hungary, 1997, pp. 1366-1370.
10. W. Fang, "Accurate analytical delay expressions for ECL and CML circuits and their applications to optimizing high-speed bipolar circuits," IEEE J. Solid-State Circuits, vol. 25, no. 2, pp. 572-583, Apr. 1990.
11. J. B. Foley and J. A. R. Bannister, "Accurately qnantifying the tradeoff between noise voltage swing in emitter coupled logic," IEEE Circuits Devices Mag., pp. 32-37, May 1994.
12. H. M. Rein, R. Schmid, P. Weger, T. Smith, T. Herzog, and R. Lachner, "A versatile Si-Bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10 Gb/s optical-fiber links," IEEE J. Solid-State Circuits, vol. 29, pp. 1014-1021, Sept. 1994.