Hydrogen plasma passivation and improvement of the photovoltaic properties of a GaAs solar cell grown on Si substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 6 A, 1999, Pages 3504-3505

  Wang, Gang ^a   Ohtsuka, K ^a   Soga, Tetsuo ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PASSIVATION; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES;

HYDROGEN PLASMA PASSIVATION;

SOLAR CELLS;

EID: 0032668270     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3504     Document Type: Article

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