Comparison of retention characteristics of Pb(Zr,Ti)O 3 (PZT) capacitors fabricated with noble metal electrodes and their oxide electrodes

Integrated Ferroelectrics

Volumn 64, Issue , 2004, Pages 169-181

  Shin, Sangmin ^a   Cho, Choong Rae ^a   Koo, June Mo ^a   Kim, Suk Pil ^a   Cho, Young Jin ^a   Park, Sung Ho ^a   Lee, Jung Hyun ^a   Park, Youngsoo ^a   Lee, June Key ^b   Jo, Ji Young ^c   Kim, Dong Jik ^c   Noh, Tae Won ^c   Yoon, Jong Gul ^d   Kang, Bo Soo ^e  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Chonnam National University   (South Korea)

^c Seoul National University   (South Korea)

^d Suwon University   (South Korea)

^e LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

FeRAM; Interface; Ir; IrO 2; Noble metal; Oxide electrode; Pt; PZT; Retention

Indexed keywords

OXIDE ELECTRODES; SIZE EFFECT; VIRGIN CAPACITORS;

ELECTRODES; FERROELECTRIC CERAMICS; INTERFACES (MATERIALS); IRON COMPOUNDS; PRECIOUS METALS;

CAPACITORS;

EID: 27844605467     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490894177     Document Type: Article

References (14)

1. A. K. Sharma, "Semiconductor Memories," New York: IEEE 387 (1997).
2. R. Ramesh, W. K. Chan, B. Wilkens, H. Gilchrist, T. Sands, J. M. Tarascon, V. G. Keramidas, D. K. Fork, J. Lee, and A. Safari, "Fatigue and retention in ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructures, " Appl. Phys. Lett. 61, 1537-1539 (1992).
3. 2) electrodes for nonvolatile memory applications," J. Appl. Phys. 77, 2146-2154 (1995).
4. J. M. Benedetto, R. A. Moore, and F. B. McLean, "Effects of operating conditions on the fast-decay component of the retained polarization in lead zirconate titanate thin films," J. Appl. Phys. 75, 460-466 (1994).
5. 3 thin-film capacitors," Jpn. J. Appl. Phys. 34, 2380-2388 (1995).
6. R. Moazzami, N. Abt, Y. Nissan-Cohen, W. H. Shepherd, M. P. Brassington, and C. Hu, "Impact of polarization relaxation on ferroelectric memory performance," Dig Tech Pap Symp (VLSI Technol., Oiso, Kanagawa) 61-62 (1991).
7. 3 films deposited by various methods for high density non-volatile memory," Mat. Res. Soc. Symp. Proc. U.4.1 (MRS Fall Meeting, Boston, MA) 748, 25-35 (2002).
8. 3 thin films for high-density ferroelectric random access memory application," Jpn. J. Appl. Phys. 41, 6690-6694 (2002).
9. A. K. Tagantsev, M. Landivar, E. Colla, and N. Setter, "Identification of passive layer in ferroelectric thin films from their switching parameters," J. Appl. Phys. 78, 2623-2630 (1995).
10. P. W. M. Blom, R. M. Wolf, J. F. M. Cillessen, and M. P. C. M. Krijn, "Ferroelectric Schottky diode," Phys. Rev. Lett. 73, 2107-2110 (1994).
11. V. Misra, B. Chen, J. Lee, R. Jha, K. Maitra, H. Lazar, J. Gurganos, and Y. S. Suh, "Dual Metal Gate Selection Issues," (6th Annual Topical Research Conference on Reliability, Oct. 27th-28th, NC State University) 2003.
12. J. F. M. Cillessen, M. W. J. Prins, and R. M. Wolf, "Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition," J. Appl. Phys. 81, 2777-2783 (1997).
13. 2 top electrodes," Appl. Phys. Lett. 84, 3127-3129 (2004).
14. 9 thin films investigated at nanoscale," J. Appl. Phys. 89, 1836-1843 (2001).