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Volumn 124-125, Issue SUPPL., 2005, Pages 297-300
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Porous silicon damage enhanced phosphorus and aluminium gettering of p-type Czochralski silicon
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Author keywords
Al and P gettering; Hall mobility; Porous silicon
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Indexed keywords
ALUMINUM;
ANNEALING;
CRYSTAL GROWTH FROM MELT;
HALL EFFECT;
MATHEMATICAL MODELS;
PHOSPHORUS;
PURIFICATION;
SAMPLING;
SCHOTTKY BARRIER DIODES;
AL- AND P GETTERING;
HALL MOBILITY;
HEMISPHERICAL VOIDS;
METAL SOLUBILITY MODEL;
POROUS SILICON;
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EID: 27844576541
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mseb.2005.08.016 Document Type: Conference Paper |
Times cited : (14)
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References (10)
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