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Volumn 124-125, Issue SUPPL., 2005, Pages 297-300

Porous silicon damage enhanced phosphorus and aluminium gettering of p-type Czochralski silicon

Author keywords

Al and P gettering; Hall mobility; Porous silicon

Indexed keywords

ALUMINUM; ANNEALING; CRYSTAL GROWTH FROM MELT; HALL EFFECT; MATHEMATICAL MODELS; PHOSPHORUS; PURIFICATION; SAMPLING; SCHOTTKY BARRIER DIODES;

EID: 27844576541     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.016     Document Type: Conference Paper
Times cited : (14)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.