Modeling Fully Depleted SOI MOSFETs in 3D Using Recursive Scattering Matrices

Journal of Computational Electronics

Volumn 2, Issue 2-4, 2003, Pages 329-334

  Gilbert, M J ^a   Akis, R ^a   Ferry, D K ^a  

^a Arizona State University   (United States)

Author keywords

3D quantum simulation; scattering matrices; SOI MOSFET

Indexed keywords

3D MODELING; ITERATIVE METHODS; MOSFET DEVICES; QUANTUM CHEMISTRY; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS;

COMPUTATION TIME; FULLY DEPLETED SOI; QUANTUM MECHANICAL; QUANTUM SIMULATIONS; SCATTERING MATRICES; SEMICONDUCTOR INDUSTRY; SOI-MOSFETS; THREE DIMENSIONS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 27844557363     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/B:JCEL.0000011447.81341.25     Document Type: Article

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