Hydrogen response of Pd schottky diodes formed on AlGaN/GaN heterostructure

e-Journal of Surface Science and Nanotechnology

Volumn 3, Issue , 2005, Pages

  Matsuo, Kazushi ^a   Kimura, Takeshi ^a   Hasegawa, Hideki ^a   Hashizume, Tamotsu ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

AlGaN GaN; Hydrogen sensor; Palladium; Schottky diode

Indexed keywords

ALUMINUM COMPOUNDS; CHEMICAL SENSORS; GALLIUM NITRIDE; HETEROJUNCTIONS; HYDROGEN; LEAKAGE CURRENTS; PALLADIUM; PRESSURE EFFECTS; THERMAL EFFECTS; TRANSPORT PROPERTIES;

ALGAN/GAN; CURRENT TRANSPORT; HYDROGEN SENSORS;

SCHOTTKY BARRIER DIODES;

EID: 27844547949     PISSN: 13480391     EISSN: 13480391     Source Type: Journal    
DOI: 10.1380/ejssnt.2005.314     Document Type: Conference Paper

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