Nanoscopic inclusions in high-deposition-rate A-Si:H

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 2004, Pages 73-76

  Brinza, Monica ^a   Emelianova, Evguenia V ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DENSITY (SPECIFIC GRAVITY); DISPERSIONS; ELECTRIC FIELD EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SEMICONDUCTOR GROWTH; TRANSPORT PROPERTIES;

AMORPHOUS MATRICES; GAUSSIAN DENSITY; HIGH-DEPOSITION-RATE A-SI:H; NANOSCOPIC INCLUSIONS;

NANOSTRUCTURED MATERIALS;

EID: 27844494638     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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