Highly integrated 60 GHz transmitter and receiver MMICs in a GaAs pHEMT technology

IEEE Journal of Solid-State Circuits

Volumn 40, Issue 11, 2005, Pages 2174-2185

  Gunnarsson, Sten E ^b   Kärnfelt, Camilla ^b   Zirath, Herbert ^a,b,c,d   Kozhuharov, Rumen ^b,c   Kuylenstierna, Dan ^a,b   Alping, Arne ^a,c,e   Fager, Christian ^a,b  

^a IEEE

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c Ericsson Microwave Systems AB   (Sweden)

^d Microwave Electronics Laboratory   (Sweden)

^e ERICSSON RESEARCH   (Sweden)

Author keywords

60 GHz; Balanced resistive mixer; GaAs; High data rate wireless communication; Highly integrated; Image reject mixer; MMIC; Multi functional; Multiply by eight (X8) LO chain; pHEMT; Receiver; Three stage amplifier; Transmitter; V band

Indexed keywords

60 GHZ; BALANCED RESISTIVE MIXER; GAAS; HIGH DATA-RATE WIRELESS COMMUNICATION; HIGHLY INTEGRATED; IMAGE REJECT MIXER; MULTI-FUNCTIONAL; PHEMT; RECEIVER; V-BAND;

BUFFER AMPLIFIERS; IMAGE PROCESSING; MICROPROCESSOR CHIPS; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL RECEIVERS; TRANSMITTERS; WIRELESS TELECOMMUNICATION SYSTEMS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 27844480978     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2005.857366     Document Type: Article

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