38 GHz MMIC PHEMT-based tripler with low phase-noise properties

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2000, Pages 509-512

  Boudiaf, Ali ^a   Bachelet, Didier ^b   Rumelhard, Christian ^c  

^a ATN Microwave Inc   (United States)

^b UNIVERSITÉ GUSTAVE EIFFEL   (France)

^c Bioinformatique et Chimie Moléculaire   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONVERSION LOSS; PHASE NOISE DEGRADATION; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR;

CURRENT VOLTAGE CHARACTERISTICS; FREQUENCIES; FREQUENCY MULTIPLYING CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTIMIZATION; SPURIOUS SIGNAL NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033694483     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2000.861095     Document Type: Article

References (10)

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10. Tran, L.; Delaney, & al, "Frequency translation MMICs using InP HEMT technology", IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest, pp. 193-196, San Francisco 1996.