Characteristics of the Al2O3 barrier with CoFeB pinned layer in magnetic tunnel junctions

IEEE Transactions on Magnetics

Volumn 41, Issue 10, 2005, Pages 2676-2678

  Bae, Ji Young ^a   Lim, Woo Chang ^a   Kim, Hyun Jeong ^a   Kim, Tae Wan ^b   Lee, Taek Dong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Chemically clean interface; CoFeB amorphous electrode; Magnetic tunnel junction (MTJ)

Indexed keywords

ALUMINUM ALLOYS; ANNEALING; COBALT ALLOYS; FERROMAGNETIC MATERIALS; MAGNETORESISTANCE;

CHEMICALLY CLEAN INTERFACE; COFEB AMORPHOUS ELECTRODES; FERROMAGNETIC ELECTRODES; MAGNETIC TUNNEL JUNCTION (MTJ);

TUNNEL JUNCTIONS;

EID: 27744578437     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2005.855297     Document Type: Article

References (5)

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2. H. Kano, K. Bessho, Y. Higo, K. Ohba, M. Hashimoto, T. Mizuguchi, and M. Hosomi, "MRAM with improved magnetic tunnel junctions material," in Intermag Eur., 2002, Paper BB-04.
3. D. Wang, D. Norman, C. Daughton, J. M. Qian, and Z. Fink, "70% TMR room temperature for SDT sandwich junctions with CoFeB as free and reference layers," IEEE Trans. Magn., vol. 40, no. 4, pp. 2269-2271, Jul. 2004.
4. K. Tsunekawa, Y. Nagamine, D. D. Djayaprawira, M. Nagai, and H. Maehara, "Over 60% TMR at room temperature in MTJ films prepared with surface modification process," in 9th Joint MMM/Intermag Conf., Anaheim, CA, 2004, Paper BD-03.
5. J. Y. Bae, W. C. Lim, H. J. Kim, T. W. Kim, and T. D. Lee, "Crystallization behavior of CoFeB electrode layers in annealed MTJs," Jpn. J. Appl. Phys., vol. 44, no. 5A, pp. 3002-3004, May 2005.