Crystallization behavior of Co32Fe48B20 electrode layers in annealed magnetic tunnel junctions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 5 A, 2005, Pages 3002-3004

  Bae, Ji Young ^a   Lim, Woo Chang ^a   Kim, Hyun Jeong ^a   Kim, Tae Wan ^b   Lee, Taek Dong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Amorphous electrode; CoFeB; Magnetic tunnel junctions; MRAM

Indexed keywords

ANNEALING; COBALT COMPOUNDS; CRYSTALLIZATION; ELECTRIC INSULATION; ELECTRIC RESISTANCE; ELECTRODES; FERROMAGNETIC MATERIALS; INTERFACES (MATERIALS); TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS ELECTRODE; COFEB; MAGNETIC TUNNEL JUNCTION; MRAM;

TUNNEL JUNCTIONS;

EID: 22544455059     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.3002     Document Type: Article

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