A new combined local and lateral design technique for increased SOA of large area IGCTs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2005, Pages 203-206

  Stiasny, Thomas ^a   Streit, Peter ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DISTRIBUTION; IGCT DESIGN; LARGE AREA DEVICES; SOA PERFORMANCE;

DESIGN; ELECTRIC CURRENTS;

INTEGRATED CIRCUIT LAYOUT;

EID: 27744563512     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. K. Satoh et. al,: "New design approach for ultra high power GCT Thyristor", ISPSD, 1999
2. A. Weber et. al.: "10kV power semiconductors - a breakthrough for 6.9kV medium voltage drives", ISPSD 2002
3. K. Satoh et. al,: "6kV/4kA Gate Commutated Turn-off Thyristor with operation DC voltage of 3.6kV", ISPSD 98
4. H. Gruening et. al.: "A new compact high dl/dt gate drive unit for 6-inch GCTs", ISPSD 2004
5. Th.Stiasny et al, "Large area IGCTs with improved SOA, PCIM Nürnberg 2004
6. A. Zuckerberger et.al, "Design, simulation and realization of high power NPC converters equipped with IGCTs", IEE-IAS, St Louis1998
7. M. Rahimo et al. "Switching-Self-Clamping-Mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and Diodes", ISPSD, Osaka 2004