10 kV power semiconductors - Breakthrough for 6.9 kV medium voltage drives

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 45-48

  Weber, Andre ^a   Eicher, S ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

Diode; High voltage semiconductor; IGBT; IGCT

Indexed keywords

ANODES; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC DRIVES; ELECTRIC INVERTERS; ELECTRIC MOTORS; ELECTRIC NETWORK TOPOLOGY; ELECTRIC POTENTIAL; ENERGY CONSERVATION; INSULATED GATE BIPOLAR TRANSISTORS; SEMICONDUCTOR DIODES; SILICON WAFERS;

MEDIUM VOLTAGE DRIVES (MVD); POWER SEMICONDUCTORS;

POWER ELECTRONICS;

EID: 0036054221     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Use of multi-level inverters to reduce high-frequency effects in induction motor drives