New design approach for ultra high power GCT thyristor

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 351-354

  Satoh, K ^a   Morishita, K ^a   Hirano, N ^a   Yamamoto, M ^a   Kawakami, A ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE COMMUTATED TURN OFF THYRISTORS; OPTIMUM DESIGN; TURN OFF CAPABILITY;

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC WAVEFORMS; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE STRUCTURES; SWITCHING SYSTEMS;

THYRISTORS;

EID: 0032598880     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)