Electrical characterization of homoepitaxial diamond p-n+ junction

Diamond and Related Materials

Volumn 14, Issue 11-12, 2005, Pages 1995-1998

  Makino, Toshiharu ^a   Kato, Hiromitsu ^b   Ri, Sung Gi ^b   Chen, Yigang ^b   Okushi, Hideyo ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NONE

Author keywords

Diamond film; Electrical properties characterization; n type doping; p type doping

Indexed keywords

DIAMOND FILMS; DIFFUSION; ELECTRIC PROPERTIES; SINGLE CRYSTALS;

ELECTRICAL PROPERTIES CHARACTERIZATION; N-TYPE DOPING; P-TYPE DOPING;

SEMICONDUCTOR JUNCTIONS;

EID: 27744563312     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2005.07.019     Document Type: Conference Paper

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