Evaluation of insulator thickness through excitation-wavelength dependence of photoluminescence of CdSe/ZnS nanocrystals

Journal of Applied Physics

Volumn 98, Issue 8, 2005, Pages

  Ozasa, Kazunari ^a,b   Nemoto, Shigeyuki ^b   Maeda, Mizuo ^b   Hara, Masahiko ^b  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITATION WAVELENGTH; INSULATOR THICKNESS; PHOTOLUMINESCENCE INTENSITY; SOLUTION ETCHING;

CADMIUM COMPOUNDS; ELECTRIC INSULATORS; ESCALATORS; ETCHING; PHOTOLUMINESCENCE; SELENIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; VISUALIZATION;

NANOSTRUCTURED MATERIALS;

EID: 27744483143     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2108149     Document Type: Article

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