Performances of CYTOPTM low-k dielectric layer bridged GaAs-based enhancement mode pHEMT for wireless power application

Solid-State Electronics

Volumn 49, Issue 10, 2005, Pages 1708-1712

  Lin, C H ^a   Oshita, F K ^a   Jennison, M J ^a   Chang, P C ^a   Wei, J ^a   Wilhelmi, C ^a   Bramlett, M ^a   Parkhurst, R ^a   Strathman, S D ^a   Maple, M ^a  

^a AGILENT TECHNOLOGIES   (United States)

Author keywords

CYTOPTM; E PHEMT; Low k dielectrics

Indexed keywords

ANNEALING; BIPOLAR TRANSISTORS; ELECTRON MOBILITY; NITRIDES; PASSIVATION; PERMITTIVITY;

CYTOPTM; E-PHEMT; LOW-K DIELECTRICS;

GALLIUM COMPOUNDS;

EID: 27744473726     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.07.001     Document Type: Article

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