Zero voltage switching of a 1200V PT clustered insulated Gate Bipolar Transistor

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2005, Pages 263-266

  Sweet, M R ^a   Nicholls, J ^a   Vershinin, K V ^a   Spulber, O ^a   Ngwendson, L ^a   Sankara Narayanan, E M ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ENERGY DISSIPATION; SWITCHING; THERMAL EFFECTS; TRANSIENTS;

OVER-VOLTAGES; PUNCH THROUGH CLUSTERED INSULATED GATE BIPOLAR TRANSISTORS; ZERO VOLATGE SWITCHING;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 27744465140     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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6. K. Vershinin, et al. "25A 1.2kV clustered insulated gate bipolar transistor (CIGBT) in PT technology" in press.
7. R. W. De Doncker, T. M. Jahns, A. V. Radun, D. L. Watrous and V. A. K. Temple, "Characteristics of mos controlled thyristors under zero voltage soft switching conditions," IEEE Transactions on Industry Applications, Vol. 28, No. 2, pp. 387-394, March/April 1992.