Advanced GaInP/Ga(In)As/Ge triple-junction space solar cells

European Space Agency, (Special Publication) ESA SP

Volumn , Issue 502, 2002, Pages 539-543

  Strobl, G ^a   Hilgarth, J ^a   Nell, M ^a   Dietrich, R ^a   Kern, R ^a   Kostler W ^a   Bett, A W ^a   Dimroth, F ^a   Schubert, U ^a   Flores, C ^a   Campesato, R ^a   Timo G ^a   La Roche, G ^a   Signorini, C ^a   Bogus, K ^a  

^a RWE POWER AG   (Germany)

Author keywords

Junction solar cell; Lattice mismatch; Triple

Indexed keywords

CALCULATIONS; CRYSTAL GROWTH; INFRARED RADIATION; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING GERMANIUM; SPACE APPLICATIONS;

INFRARED ABSORPTION; SPACE SOLAR CELLS; TRIPLE JUNCTION SOLAR CELLS;

SOLAR CELLS;

EID: 0036569057     PISSN: 03796566     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. Next generation GaInP/GaInAs/Ge multi-junction space cells
2. Characterisation of a 25% high-efficiency Fresnel lens nodule GaInP/GaInAs dual-junction concentrator solar cells
3. Radiation response analysis of triple junction GaInP/GaInAs/Ge solar cells