27.5% efficiency InGaP/InGaAs/Ge advanced triple junction (ATJ) space solar cells for high volume manufacturing

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 816-819

  Stan, M A ^a   Aiken, D J ^a   Sharps, P R ^a   Fatemi, N S ^a   Spadafora, F A ^a   Hills, J ^a   Yoo, H ^a   Clevenger, B ^a  

^a Emcore Photovoltaics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; MATHEMATICAL MODELS; OPTIMIZATION; RADIATION EFFECTS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM COMPOUNDS; SPACE APPLICATIONS;

ADVANCED TRIPLE JUNCTION; BULK MATERIAL QUALITY; CELL AVERAGE CONVERSION EFFICIENCY; HIGH VOLUME MANUFACTURING; SPACE SOLAR CELLS;

SOLAR CELLS;

EID: 0036948595     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. M.A. Stan, P.R. Sharps, N.S. Fatemi, F.S. Spadafora, D.J. Aiken and H.Q. Hou, "Design and Production of Extremely Radiation-Hard 26% InGaP/GaAs/Ge Triple-Junction Solar Cells" in: Proc. 28th IEEE Photovolt. Specialists Conf. (IEEE, Piscataway, 2000) pp. 1374-1377.
2. D.J. Aiken, N.S. Fatemi, C.S. Murray, P.R. Sharps, F.A. Spadafora, and M.A. Stan, "High Efficiency Triple Junction Manufacturing and Development at Emcore Photovoltaics" Proceedings of the 17th SPRAT (2001).
3. S.R. Kurtz, P. Faine, J.M. Olson, J. Applied Physics, 68 (1990), p. 1890.
4. 1-xAs Solar Cells", Proc. of the 16th European Photovoltaic Solar Energy Conference (2000) pp. 1030-1033.