Effect of crystal orientation on damage accumulation and postimplantation annealing for iron implantation into sapphire

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 730-734

  McHargue, Carl J ^a   Alves, E ^b   Da Silva, M F ^b   Scares, J C ^b  

^a UNIVERSITY OF TENNESSEE   (United States)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

Annealing; Damage accumulation; Sapphire

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ION BEAMS; ION IMPLANTATION; IRON; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

DAMAGE ACCUMULATION;

SAPPHIRE;

EID: 0033513826     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00873-8     Document Type: Article

References (6)

1. G.C. Farlow, P.S. Sklad, C.W. White, C.J. McHargue, B.R. Appleton, MRS Proceedings 60 (1986) 387.
2. M.E. O'Hern, C.J. McHargue, C.W. White, G.C. Farlow, Nucl. Instr. and Meth. B 46 (1990) 171.
3. M.E. O'Hern, L.J. Romana, C.J. McHargue, J.C. McCallum, C. White, Effects of radiation on materials: 15th international symposium, in: R. Stoller, A. Kumar, D. Gelles (Eds.), ASTM STP 1125, ASTM, Philadelphia, PA, 1992, p. 740.
4. C.J. McHargue, G.C. Farlow, P.S. Sklad, C.W. White, A. Perez, N. Kornilies, G. Marest, Nucl. Instr. and Meth. B 19/ 20 (1987) 813.
5. S.X. Ren, C.J. McHargue, L.F. Allard, Y. Chen, J.D. Hunn, B.N. Lucas, R.K. Williams, Microstructure of irradiated materials, in: I.M. Robertson, L.E. Rehn, S.J. Zinkle, W. Phythian (Eds.), Materials Research Society, Pittsburgh, PA, 1995, p. 1995.
6. C.J. McHargue, P.S. Sklad, C.W. White, G.C. Farlow, A. Perez, G. Marest, J. Mater. Res. 6 (1991) 2145.