Development of a B-factory monolithic active pixel detector - The continuous-acquisition pixel prototypes

IEEE Transactions on Nuclear Science

Volumn 52, Issue 4, 2005, Pages 1187-1191

  Barbero, M ^a   Varner, G ^a   Bozek, A ^b   Browder, T ^a   Fang, F ^a   Hazumi, M ^c   Igarashi, A ^d   Iwaida, S ^d   Kennedy, J ^a   Kent, N ^a   Olsen, S ^a   Palka, H ^b   Rosen, M ^a   Ruckman, L ^a   Stanic, S ^d   Trabelsi, K ^a   Tsuboyama, T ^e   Uchida, K ^a  

^a UNIVERSITY OF HAWAII   (United States)

^b INSTITUTE OF NUCLEAR PHYSICS   (Poland)

^c HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

^e NONE

Author keywords

B factory; CMOS; MAPS; Monolithic active pixel sensor; Radiation hard; Vertex detector

Indexed keywords

CMOS INTEGRATED CIRCUITS; IONIZATION; IRRADIATION; LEAKAGE CURRENTS; PARTICLE BEAM TRACKING; SENSORS;

B FACTORY; MONOLITHIC ACTIVE PIXEL SENSOR; RADIATION HARD; VERTEX DETECTOR;

RADIATION DETECTORS;

EID: 27644563970     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.852639     Document Type: Article

References (9)

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