Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection

Applied Physics Letters

Volumn 87, Issue 19, 2005, Pages 1-3

  Chen, W M ^a   Buyanova, I A ^a   Nishibayashi, K ^b   Kayanuma, K ^b   Seo, K ^b   Murayama, A ^b   Oka, Y ^b   Thaler, G ^c   Frazier, R ^c   Abernathy, C R ^c   Ren, F ^c   Pearton, S J ^c   Pan, C C ^d   Chen, G T ^d   Chyi, J I ^d  

^a LINKÖPING UNIVERSITY   (Sweden)

^b TOHOKU UNIVERSITY   (Japan)

^c University of Florida   (United States)

^d NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY RELAXATION; SPIN RELAXATION; THERMALIZATION;

CARRIER CONCENTRATION; EXCITONS; HOT CARRIERS; RELAXATION PROCESSES; SEMICONDUCTING INDIUM COMPOUNDS; THERMOANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 27644496755     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2125125     Document Type: Article

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