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Volumn 2, Issue 1, 2003, Pages 242-247

Multidimensional CMOS In-Plane Stress Sensor

Author keywords

Inplane stress; Junction field effect; Stress sensor; Switching current

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FINITE ELEMENT METHOD; POLYSILICON; SENSORS; STRESSES; SWITCHING;

EID: 1542333752     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (4)

References (17)
  • 6
    • 84944485155 scopus 로고
    • The theory of p-n junctions in semiconductors and p-n junctions in transistors
    • W. Schockley, The theory of p-n junctions in semiconductors and p-n junctions in transistors, Bell Syst. Tech. J., Vol 28, (1949).
    • (1949) Bell Syst. Tech. J. , vol.28
    • Schockley, W.1
  • 7
    • 1542359317 scopus 로고
    • The Evolution of the Theory of the Current Voltage Characteristics of p-n Junctions
    • J.L. Moll, Proc IRE,"The evolution of the theory of the current voltage characteristics of p-n junctions", Vol. 45, (1957).
    • (1957) Proc IRE , vol.45
    • Moll, J.L.1
  • 12
    • 84937744575 scopus 로고
    • Modeling and simulation of insulated-gate field-effect transistor switching circuits
    • H. Shichman, D.A. Hodges, Modeling and simulation of insulated-gate field-effect transistor switching circuits, IEEE J. Solid State Circuits, SC-3, (1968).
    • (1968) IEEE J. Solid State Circuits , vol.SC-3
    • Shichman, H.1    Hodges, D.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.