Effects of Hydrogen Annealing on the Electrical Properties of SrBi 2Nb2O9 Thin films

Journal of the Korean Physical Society

Volumn 43, Issue 5 II, 2003, Pages 850-853

  Kim, Ik Soo ^a,b   Kim, Yong Tae ^a   Kim, Seong Il ^a   Choi, In Hoon ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

Curie temperature; Ferroelectric thin film; Hydrogen annealing; Interface trap

Indexed keywords

EID: 0344120167     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.43.850     Document Type: Article

References (10)

1. J. F. Scott, M. C. Scott, C. A. Paz de Araujo and L. D. McMillan, Nature (London) 374, 627 (1995).
2. C. K. Kwok and S. B. Desu, J. Mater. Res. 8, 339 (1993).
3. H. S. Choi, E. H. Kim, Y. T. Kim, J. H. Choi, J. Y. Lee and I. H. Choi, J. Korean Phys. Soc. 39, 179 (2001).
4. K. Watanabe, M. Tanaka, E. Sumitomo, K. Katori, H. Yagi and J. F. Scott, Appl. Phys. Lett. 73, 126 (1998).
5. S. Bhattacharyya, S. S. N. Bharadwaja and S. B. Krupanidhi, Appl. Phy. Lett. 75, 2656 (1999).
6. T. Nagahama, T. Manabe, I. Yamaguchi, T. Tsuchiya and S. Mizuta, Thin Solid Films 353, 52 (1999).
7. O. S. Kwon, C. S. Hwang and S. K. Hong, Appl. Phy. Lett. 75, 2656 (1999).
8. I. Koiwa, T. Kanehara, H. Kato, S. Ono, A. Sakakibara, T. Osaka and K. Asami, Jpn. J. Appl. Phys. 37, 5192 (1998).
9. H. Miki, K. K-Abdelghafar, K. Torii and Y. Fujisaki, Jpn. J. Appl. Phys. 38, 1132 (1997).
10. J. M. Koo, I. Bang, T. H. Kim and J. G. Lee, J. Korean Phys. Soc. 38, 273 (2001).