Photoluminescence and AFM characterisation of photochemically etched highly resistive n-type silicon

Physica Status Solidi C: Conferences

Volumn 2, Issue 9, 2005, Pages 3375-3378

  Hadjersi, T ^a   Kooij, E S ^b   Yamamoto, N ^c   Sakamaki, K ^d   Takai, H ^d   Gabouze, N ^a  

^a L'Unite de Developpement de la Technologie du Silicium   (Algeria)

^b UNIVERSITY OF TWENTE   (Netherlands)

^c NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^d TOKYO DENKI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC EXCITATION; ETCHING; IRRADIATION; MORPHOLOGY; PHOTOCHEMICAL REACTIONS; PHOTOLUMINESCENCE; POROUS MATERIALS;

LIGHT-EMITTING LAYER; PHOTOCHEMICAL ETCHING; ROOM TEMPERATURE; SILICON LAYER;

SILICON;

EID: 27444432904     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461174     Document Type: Conference Paper

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