Preparation of In2S3 thin films by MOCVD using single source precursors: Tris(N,N-ethylbutyldithiocarbamato)indium(III) and tris(2-ethylpiperidinedithiocarbamato)indium(III)

Bulletin of the Korean Chemical Society

Volumn 26, Issue 9, 2005, Pages 1453-1456

  Seung, Soo Lee ^a   Seok, Hwan Yoon ^a   Kook, Won Seo ^a   Shim, Il Wun ^a  

^a Chung Ang University   (South Korea)

Author keywords

In2S3 thin film; MOCVD; Single source precursor; Tris(N,N ethylbutyldithiocarbamato)indium(III) and tris(2 ethylpiperidinedithiocarbamato)indium(III)

Indexed keywords

EID: 27344459949     PISSN: 02532964     EISSN: None     Source Type: Journal    
DOI: 10.5012/bkcs.2005.26.9.1453     Document Type: Article

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