Swift heavy ion beam induced recrystallization of amorphous Si layers

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 240, Issue 1-2, 2005, Pages 239-244

  Sahoo, P K ^a,d   Som, T ^b   Kanjilal, D ^c   Kulkarni, V N ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

^b INSTITUTE OF PHYSICS   (India)

^c INTER UNIVERSITY ACCELERATOR CENTRE   (India)

^d UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

IBIEC; RBS channeling; Recrystallization; Swift heavy ions

Indexed keywords

ACTIVATION ENERGY; EPITAXIAL GROWTH; ION BEAMS; SILICON; WAVEGUIDES;

ION BEAM INDUCED RECRYSTALLIZATION (IBIC); RBS-CHANNELING; SWIFT HEAVY IONS; TEMPERATURE REGIMES;

RECRYSTALLIZATION (METALLURGY);

EID: 27344457120     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.06.123     Document Type: Conference Paper

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