Influence of the low energy ion beam milling on the electrical properties of InSb

Physica Status Solidi C: Conferences

Volumn 2, Issue 4, 2005, Pages 1418-1422

  Berchenko, N N ^a,d   Bogoboyashchiy, V V ^b   Izhnin, I I ^c   Pociask, M ^a   Sheregii, E M ^a   Yudenkov, V A ^d  

^a UNIVERSITY OF RZESZÓW   (Poland)

^b KREMENCHUK MYKHAILO OSTROHRADSKYI NATIONAL UNIVERSITY   (Ukraine)

^c R and D Institute for Materials SRC Carat   (Ukraine)

^d LVIV POLYTECHNIC NATIONAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CRYSTAL LATTICES; ELECTRON MOBILITY; ION BEAMS; ION BOMBARDMENT; IONS; MILLING (MACHINING);

CRYSTAL LATTICE DAMAGES; ION BEAM MILLING; LOW MOBILITY ELECTRONS; SURFACE AMORPHISATION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 27344451695     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200460478     Document Type: Conference Paper

References (8)

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