A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2411-2414

  Armstrong, A ^a   Arehart, A ^a   Green, D ^b   Speck, J S ^b   Mishra, U K ^b   Ringel, S A ^a  

^a The Ohio State University   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARBON; DEFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SILICON;

DEEP LEVEL OPTICAL SPECTROSCOPY; DEFECT SPECTRA; SEMI-INSULATING MATERIALS;

GALLIUM NITRIDE;

EID: 27344447416     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461594     Document Type: Conference Paper

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