Random macropore formation in n-type silicon under front side illumination: Correlation with anisotropic etching

Physica Status Solidi C: Conferences

Volumn 2, Issue 9, 2005, Pages 3394-3398

  Outemzabet, R ^a,b   Gabouze, N ^b   Kesri, N ^a   Cheraga, H ^b  

^a UNIVERSITY OF SCIENCES AND TECHNOLOGY HOUARI BOUMEDIENE   (Algeria)

^b L'Unite de Developpement de la Technologie du Silicium   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTROCHEMISTRY; ETCHING; LIGHTING; PHOTOCHEMICAL REACTIONS; SCANNING ELECTRON MICROSCOPY;

INFRARED ABSORBANCE MEASUREMENT; MACROPORES MACROPORES; PHOTOELECTROCHEMICAL (PEC) ETCHING;

POROUS SILICON;

EID: 27344441370     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461185     Document Type: Conference Paper

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