Midgap interface states at epitaxial Al/AlAs(001) heterojunctions

Solid State Communications

Volumn 126, Issue 5, 2003, Pages 265-268

  Maxisch, T ^a   Baldereschi, A ^a   Binggeli, N ^b  

^a EPFL   (Switzerland)

^b ABDUS SALAM INTERNATIONAL CENTRE FOR THEORETICAL PHYSICS   (Italy)

Author keywords

A. Heterojunctions; A. Metal semiconductor contacts; A. Surfaces and interfaces; D. Electronic states (localized); D. Interface states

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ELECTRON ENERGY LEVELS; ENERGY GAP; FERMI LEVEL; SEMICONDUCTING ALUMINUM COMPOUNDS;

MIDGAP INTERFACE STATES;

HETEROJUNCTIONS;

EID: 0037401474     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(03)00109-1     Document Type: Article

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