Spatially direct and indirect transitions in InGaN/GaN structures with coupled quantum wells

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2337-2340

  Paskov, P P ^a   Bergman, J P ^a   Monemar, B ^a   Keller, S ^b   DenBaars, S P ^b   Mishra, U K ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMICS; GALLIUM NITRIDE; MONOLAYERS; SEMICONDUCTOR QUANTUM WELLS;

EXCITATION INTENSITY; MULTIPLE EMISSION BANDS; MULTIPLE QUANTUM WELL (MQW);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 27344433280     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461568     Document Type: Conference Paper

References (5)

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4. H. Kollmer, J. S. Im, S. Heppel, J. Off, F. Scholz, and A. Hangleiter, Appl. Phys. Lett. 74, 82 (1999).
5. O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, J. Phys.: Condens. Matter 14, 3399 (2002).