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25
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27144485875
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note
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a,1), which should otherwise exactly overlap each other.
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26
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27144516302
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note
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a]}/3.
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27
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27144434148
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note
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The constant term V0 is omitted, which can be done without the loss of generality.
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32
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27144472822
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note
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2 exp(-q|z - z′|) also (slightly) decreases with increasing q, where ζ(z) represents the envelope function of 2DEG in the z direction.
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34
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27144482809
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note
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10,12) We have changed the notation so as not to be confused with our φ in §4.1.
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35
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27144502782
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note
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n) slightly modified to include the effect of equipotential plane nearby the 2DEG is used.
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36
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27144438755
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note
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23) using ULSL samples with metallic grating for which elastic parameters are better known. The ratios a/d for their samples are generally much larger than those for the present study.
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38
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27144469958
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note
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Our 2DEG wafer does not contain Si δ-doped layer that works as an equipotential layer between the surface and 2DEG plane as considered in refs. 10 and 12.
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39
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0004396359
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K. Ali, E. Skuras, S. Vallis, A. R. Long, I. A. Larkin, J. H. Davies, M. C. Holland and A. A. Mongy: Superlattices Microstruct. 25 (1999) 285.
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, pp. 285
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Ali, K.1
Skuras, E.2
Vallis, S.3
Long, A.R.4
Larkin, I.A.5
Davies, J.H.6
Holland, M.C.7
Mongy, A.A.8
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40
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0034895281
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A. Kawaharazuka, T. Saku, C. A. Kikuchi, Y. Horikoshi and Y. Hirayama: Phys. Rev. B 63 (2001) 245309.
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Kawaharazuka, A.1
Saku, T.2
Kikuchi, C.A.3
Horikoshi, Y.4
Hirayama, Y.5
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41
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27144481700
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note
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11) although the resulting period a/3 = 167 nm was still larger than d (70 nm + the thickness of 2DEG in that sample).
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