70nm DRAM technology for DDR-3 application

2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Volumn , Issue , 2005, Pages 29-30

  Kim, Hyungtak ^a   Kim, Sangho ^a   Lee, Sungsam ^a   Jang, Sungho ^a   Kim, Ji Hoon ^a   Sung, Yangsoo ^a   Park, Junwoong ^a   Kwon, Saehan ^a   Jun, Sangmin ^a   Park, Wontae ^a   Han, Daehan ^a   Cho, Changhyun ^a   Kim, Yungi ^a   Kim, Kinam ^a   Ryu, Byungil ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DRAM TECHNOLOGY; LOW-VOLTAGE OPERATION; MIM CELL CAPACITORS;

CAPACITORS; ELECTRIC POTENTIAL; PERFORMANCE;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 27144483857     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.physc.2005.03.020     Document Type: Conference Paper

References (3)

1. K. Kim et al., IEEE Trans. SM., vol.15, p.137-143 (2002)
2. J.Y. Kim et al., Symp. On VLSI Tech., p. 11-12 (2003)
3. C. Cho et al., Symp. On VLSI Tech., p.32-33 (2004)