Optical properties and structure characterization of sapphire after Ni ion implantation and annealing

Journal of Applied Physics

Volumn 98, Issue 7, 2005, Pages

  Xiang, X ^a   Zu, X T ^a   Bao, J W ^a   Zhu, S ^b   Wang, L M ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION BAND; ANNEALING TEMPERATURE; NANOPARTICLES; OPTICAL ABSORPTION SPECTROSCOPY;

ABSORPTION; ANNEALING; CRYSTAL STRUCTURE; CURRENT DENSITY; ION IMPLANTATION; NICKEL COMPOUNDS; POSITIVE IONS; SURFACE PLASMON RESONANCE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

SAPPHIRE;

EID: 27144431637     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2084314     Document Type: Review

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