Physics-Based Correction of Extracted Conductance Parameters of Nonlinear Microwave Semiconductor Devices

Journal of Computational Electronics

Volumn 2, Issue 2-4, 2003, Pages 357-362

  Leuzzi, G ^a   Mencattini, A ^b   Salmeri, M ^b  

^a UNIVERSITY OF L'AQUILA   (Italy)

^b UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

device modelization; dispersive phenomena; microwave semiconductor devices

Indexed keywords

EQUIVALENT CIRCUITS; NONLINEAR SYSTEMS; PARAMETER ESTIMATION; SCATTERING PARAMETERS; SEMICONDUCTOR DEVICE MODELS;

CONDUCTANCE PARAMETERS; CONSISTENCY REQUIREMENTS; DISPERSIVE PHENOMENA; HIGH FREQUENCY MEASUREMENTS; LINEAR EQUIVALENT CIRCUITS; MODELIZATION; NONLINEAR MICROWAVES; S-PARAMETER MEASUREMENTS;

SEMICONDUCTOR DEVICES;

EID: 26944453516     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/B:JCEL.0000011452.82715.6a     Document Type: Article

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