Equivalent-voltage approach for modeling low-frequency dispersive effects in microwave FETs

IEEE Microwave and Wireless Components Letters

Volumn 12, Issue 9, 2002, Pages 339-341

  Santarelli, A ^a,b   Zucchelli, G ^a,b   Paganelli, R ^a,b   Vannini, G ^a,c   Filicori, F ^b  

^a IEEE   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

^c UNIVERSITY OF FERRARA   (Italy)

Author keywords

Electron device modeling; Empirical modeling; Low frequency dispersive effects

Indexed keywords

LOW FREQUENCY DISPERSIVE EFFECTS;

COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTROMAGNETIC DISPERSION; ELECTRON DEVICES; MICROWAVE DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 0036745006     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2002.803148     Document Type: Article

References (6)

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5. F. Filicori, G. Vannini, A. Santarelli, A. Mediavilla, A. Tazon, and Y. Newport, "Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FETs," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 2972-2981, Dec. 1995.
6. A. Santarelli, F. Filicori, G. Vannini, and P. Rinaldi, "Backgating model including self-heating for low-frequency dispersive effects in III-V FETs," Electron. Lett., vol. 34, Oct. 1998.