-
1
-
-
0036601273
-
Effect of process parameters on the surface morphology and mechanical performance of silicon structures after Deep Reactive Ion Etching (DRIE)
-
K.-S. Chen, A. A. Ayon, X. Zhang, and M. S. Spearing, "Effect of Process Parameters on the Surface Morphology and Mechanical Performance of Silicon Structures after Deep Reactive Ion Etching (DRIE)", Journal of Microelectromechanical Systems, vol. 11, pp. 264-275, 2002
-
(2002)
Journal of Microelectromechanical Systems
, vol.11
, pp. 264-275
-
-
Chen, K.-S.1
Ayon, A.A.2
Zhang, X.3
Spearing, M.S.4
-
2
-
-
26844574559
-
-
U.S. Pat. 4855017 and 4 784 720, Germany Pat. 4 241 045 C1
-
Robert Bosch GmbH, U.S. Pat. 4855017 and 4 784 720, Germany Pat. 4 241 045 C1, 1994
-
(1994)
-
-
-
3
-
-
0018030427
-
Anisotropic etching of silicon
-
K. E. Beam, "Anisotropic etching of Silicon", IEEE Trans. Electron Devices, vol.25, pp. 1185-1193, 1978
-
(1978)
IEEE Trans. Electron Devices
, vol.25
, pp. 1185-1193
-
-
Beam, K.E.1
-
5
-
-
0026392285
-
Anisotropic etching of silicon in TMAH solutions
-
San Francisco
-
O. Tabate, R. Asahi, H. Funabashi, K. Shimaoka, and S. Sugiyama, "Anisotropic etching of silicon in TMAH solutions", Digest of Tech. Papers Transducers'91 Conference, San Francisco, 1991, pp. 811-814
-
(1991)
Digest of Tech. Papers Transducers'91 Conference
, pp. 811-814
-
-
Tabate, O.1
Asahi, R.2
Funabashi, H.3
Shimaoka, K.4
Sugiyama, S.5
-
6
-
-
0342955717
-
An Industrial CMOS process family adapted for the fabrication of smart silicon sensors
-
T. Mueller, M. Brandl, O. Brand, and H. Baltes, "An Industrial CMOS Process Family Adapted for the Fabrication of Smart Silicon Sensors", Sensors and Actuators, A Physical, vol. 84, pp. 126-133, 2000
-
(2000)
Sensors and Actuators, A Physical
, vol.84
, pp. 126-133
-
-
Mueller, T.1
Brandl, M.2
Brand, O.3
Baltes, H.4
-
7
-
-
0024647478
-
Study of electrochemical etch-stop for high-precision thickness control of silicon membranes
-
B. Kloeck, S. D. Collins, N. F. de Rooij, and R. I. Smith, "Study of Electrochemical Etch-Stop for High-Precision Thickness Control of Silicon Membranes", Transaction on Electron Devices, vol. 36(4), pp. 663-669, 1989
-
(1989)
Transaction on Electron Devices
, vol.36
, Issue.4
, pp. 663-669
-
-
Kloeck, B.1
Collins, S.D.2
De Rooij, N.F.3
Smith, R.I.4
-
8
-
-
3042698431
-
Integrated bulk-micromachined gyroscope using deep trench isolation technology
-
Maastricht
-
G. Yan, Y. Zhu, C. Wang, R. Zhang, Z. Chen, X. Liu, and Y. Y. Wang, "Integrated Bulk-Micromachined Gyroscope Using Deep Trench Isolation Technology", Tech. Digest of MEMS Conference 2004, Maastricht, 2004, pp. 605-608
-
(2004)
Tech. Digest of MEMS Conference 2004
, pp. 605-608
-
-
Yan, G.1
Zhu, Y.2
Wang, C.3
Zhang, R.4
Chen, Z.5
Liu, X.6
Wang, Y.Y.7
-
9
-
-
3042699996
-
Fabrication of 3D microstructures and microactuators on (100) SOI wafer using the DAWN process
-
Maastricht
-
H.-Y. Chu and W. Fang, "Fabrication of 3D Microstructures and Microactuators on (100) SOI Wafer Using the DAWN Process", Tech. Digest of MEMS Conference 2004, Maastricht, 2004, pp. 253-256
-
(2004)
Tech. Digest of MEMS Conference 2004
, pp. 253-256
-
-
Chu, H.-Y.1
Fang, W.2
|