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Volumn , Issue , 2005, Pages 475-478

Micro/nano glass press molding using silicon carbide molds fabricated by silicon lost molding

Author keywords

[No Author keywords available]

Indexed keywords

MIRROR SURFACE; NANO GLASS; PRESS MOLDING; SILICON MOLD;

EID: 26844472192     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2005.1453970     Document Type: Conference Paper
Times cited : (9)

References (6)
  • 1
    • 26844486446 scopus 로고    scopus 로고
    • Quartz glass molding by precision glass molding method
    • Hiroyuki Maehara and Hiroshi Murakoshi, "Quartz Glass Molding by Precision Glass Molding Method", Trans. IEE Jpn., pp. 494-497, 2002.
    • (2002) Trans. IEE Jpn. , pp. 494-497
    • Maehara, H.1    Murakoshi, H.2
  • 2
    • 26844531927 scopus 로고    scopus 로고
    • The present condition of glass-molding press machine
    • Yoshizo Komiyama, "The Present Condition of Glass-Molding Press Machine", NEW GLASS, 13, 2, pp. 38-42, 1998.
    • (1998) New Glass , vol.13 , Issue.2 , pp. 38-42
    • Komiyama, Y.1
  • 3
    • 0032595009 scopus 로고    scopus 로고
    • Fabrication and testing of micromachined silicon carbide and nickel fuel atomizers for gas turbine engines
    • N. Rajan et al, "Fabrication and Testing of Micromachined Silicon Carbide and Nickel Fuel Atomizers for Gas Turbine Engines", J. Microelectromech. Syst., 8, pp. 251-257, 1999.
    • (1999) J. Microelectromech. Syst. , vol.8 , pp. 251-257
    • Rajan, N.1
  • 4
    • 0035278834 scopus 로고    scopus 로고
    • Silicon carbide micro-reaction-sintering using micromachined silicon molds
    • Shuji Tanaka et al., "Silicon Carbide Micro-Reaction-Sintering Using Micromachined Silicon Molds", J. Microelectromech. Syst., 10, pp. 55-61, 2001.
    • (2001) J. Microelectromech. Syst. , vol.10 , pp. 55-61
    • Tanaka, S.1
  • 5
    • 0035282023 scopus 로고    scopus 로고
    • Interface reactions between silicon carbide and metals (Ni, Cr, Pd, Zr)
    • K. Bhanumurthy and R. Schmid-Fetzer, "Interface reactions between silicon carbide and metals (Ni, Cr, Pd, Zr)", Composites: Part A, 32, pp. 569-574, 2001.
    • (2001) Composites: Part A , vol.32 , pp. 569-574
    • Bhanumurthy, K.1    Schmid-Fetzer, R.2
  • 6
    • 0026973248 scopus 로고
    • Low-temperature growth of 3C-SiC on Si substrate by chemical vapor deposition using hexamethyldisilane as a source material
    • Koji Takahashi et al., "Low-Temperature Growth of 3C-SiC on Si Substrate by Chemical Vapor Deposition Using Hexamethyldisilane as a Source Material" J. Electrochem. Soc., 139, pp. 3565-3571, 1992.
    • (1992) J. Electrochem. Soc. , vol.139 , pp. 3565-3571
    • Takahashi, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.