Observation of bevelled GaSb/InAs quantum wells by Raman mapping

Journal of Raman Spectroscopy

Volumn 36, Issue 10, 2005, Pages 978-983

  Zhang, Tong ^a   Hsieh, M L ^a,b   Branford, W R ^a   Steer, M J ^c   Stradling, R A ^a   Cohen, L F ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Bevel; InAs; Quantum well; Raman mapping

Indexed keywords

GALLIUM COMPOUNDS; III-V SEMICONDUCTORS; INDIUM ARSENIDE; LASER EXCITATION; MAPPING; QUANTUM WELL LASERS;

BEVEL; BEVELINGS; EXCITATION WAVELENGTH; INAS QUANTUM WELL; MICRO-RAMAN STUDIES; QUANTUM-WELLS; RAMAN MAPPING; SINGLE QUANTUM WELL; VERTICAL RESOLUTION; WELL REGION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 26644459953     PISSN: 03770486     EISSN: None     Source Type: Journal    
DOI: 10.1002/jrs.1393     Document Type: Article

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