Transient temperature field study of GaN material in laser lift-off technique based on finite element method

Zhongguo Jiguang/Chinese Journal of Lasers

Volumn 32, Issue 9, 2005, Pages 1295-1299

  Wang, Ting ^a   Guo, Xia ^a   Liu, Bin ^a   Niu, Nan Hui ^a   Guo, Wei Ling ^a   Shen, Guang Di ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Finite element method; GaN material; Laser lift off; Optoelectronics; Temperature field

Indexed keywords

FINITE ELEMENT METHOD; HEAT TRANSFER; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM COMPOUNDS; TEMPERATURE DISTRIBUTION; TWO DIMENSIONAL;

GAN MATERIAL; LASER LIFT-OFF; OPTOELECTRONICS; TEMPERATURE FIELD;

LASER BEAM EFFECTS;

EID: 26644435783     PISSN: 02587025     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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