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Volumn , Issue , 2005, Pages 487-490

Micromachining of pulsed laser annealed PECVD SIxGE 1-x deposited at temperatures ≤ 370°C

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH RATE; PULSE FLUENCE; PULSED EXCIMER LASERS; STRUCTURAL LAYERS;

EID: 26444549928     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2005.1453973     Document Type: Conference Paper
Times cited : (5)

References (12)
  • 1
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    • S. Sedky, A. Witvrouw and K. Baert, "Poly SiGe, a Promising Material for MEMS Monolithic Integration with the Driving Electronics", Sensors and Actuators A, 97-98C, p. 496 (2002).
    • (2002) Sensors and Actuators A , vol.97-98 C , pp. 496
    • Sedky, S.1    Witvrouw, A.2    Baert, K.3
  • 3
    • 3042819312 scopus 로고    scopus 로고
    • Novel high growth rate processes for depositing poly-SiGe structural layers at CMOS compatible temperatures
    • A. Mehta, M. Gromova, C. Rusu, K. Baert, C. Van Hoof and A. Witvrouw, "Novel High Growth Rate Processes for Depositing Poly-SiGe Structural Layers at CMOS Compatible Temperatures", Proc. MEMS 2004, p. 721.
    • Proc. MEMS 2004 , pp. 721
    • Mehta, A.1    Gromova, M.2    Rusu, C.3    Baert, K.4    Van Hoof, C.5    Witvrouw, A.6
  • 4
    • 4344684256 scopus 로고    scopus 로고
    • Pulsed laser annealing, a low thermal budget technique for eliminating stress gradient in poly-SiGe MEMS structures
    • August
    • S. Sedky, R. Howe, T. King, "Pulsed Laser Annealing, a Low Thermal Budget Technique for Eliminating Stress Gradient in Poly-SiGe MEMS Structures", Journal of Microelectromechanical Systems 13 (4), pp. 669-675, August, 2004.
    • (2004) Journal of Microelectromechanical Systems , vol.13 , Issue.4 , pp. 669-675
    • Sedky, S.1    Howe, R.2    King, T.3
  • 6
    • 30244518297 scopus 로고
    • Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation
    • June
    • M. Thompson, G. Galvin and J. Mayer, "Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation", Physics review letters, pp. 2360-2363, June 1984.
    • (1984) Physics Review Letters , pp. 2360-2363
    • Thompson, M.1    Galvin, G.2    Mayer, J.3
  • 7
    • 0002444234 scopus 로고    scopus 로고
    • Excimer laser-induced temperature filed in melting and resolidification of silicon thin films
    • January
    • M. Hatano, S. Moon, M. Lee, K. Suzuki and C. Grigoropoulos, "Excimer laser-induced temperature filed in melting and resolidification of silicon thin films", Journal of Applied Physics, 87 (1), pp. 36-43, January 2000.
    • (2000) Journal of Applied Physics , vol.87 , Issue.1 , pp. 36-43
    • Hatano, M.1    Moon, S.2    Lee, M.3    Suzuki, K.4    Grigoropoulos, C.5
  • 8
    • 0028481824 scopus 로고
    • Crystallization process of polycrystalline silicon by KrF excimer laser annealing
    • August
    • H. Watanabe, H. Miki, S. Sugai, K. Kawaski and T. Kioka, "Crystallization process of polycrystalline silicon by KrF excimer laser annealing", Japanese Journal of Applied Physics, 33 (8), pp. 4491-4498, August, 1994.
    • (1994) Japanese Journal of Applied Physics , vol.33 , Issue.8 , pp. 4491-4498
    • Watanabe, H.1    Miki, H.2    Sugai, S.3    Kawaski, K.4    Kioka, T.5
  • 9
    • 2942631231 scopus 로고    scopus 로고
    • Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing
    • June
    • H. Watakabe, T. Sameshima, H. Kanno, T. Sadoh and M. Miyao, "Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing", Journal of Applied Physics, 95 (11), pp. 6457-6461, June, 2004.
    • (2004) Journal of Applied Physics , vol.95 , Issue.11 , pp. 6457-6461
    • Watakabe, H.1    Sameshima, T.2    Kanno, H.3    Sadoh, T.4    Miyao, M.5
  • 10
    • 0002444234 scopus 로고    scopus 로고
    • Excimer laser-induced temperature filed in melting and resolidification of silicon thin films
    • January
    • M. Hatano, S. Moon, M. Lee, K. Suzuki and C. Grigoropoulos, "Excimer laser-induced temperature filed in melting and resolidification of silicon thin films", Journal of Applied Physics, 87 (1), pp. 36-43, January 2000.
    • (2000) Journal of Applied Physics , vol.87 , Issue.1 , pp. 36-43
    • Hatano, M.1    Moon, S.2    Lee, M.3    Suzuki, K.4    Grigoropoulos, C.5
  • 12
    • 0000887742 scopus 로고    scopus 로고
    • Step-by-step excimer laser induced crystallization of a-Si:H
    • P. lengsfeld, N.H. Nickel, W. Fuhs, Appl. Phys. Lett. "Step-by-step excimer laser induced crystallization of a-Si:H 76 (13), pp. 1680-1682, (2000).
    • (2000) Appl. Phys. Lett. , vol.76 , Issue.13 , pp. 1680-1682
    • Lengsfeld, P.1    Nickel, N.H.2    Fuhs, W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.