Broad-band photoresponse from InAs quantum dots embedded into InGaAs graded well

IEEE Electron Device Letters

Volumn 26, Issue 9, 2005, Pages 631-633

  Liang, Jie ^a   Chua, Ying Chao ^a   Manasreh, M O ^a   Marega Jr , Euclydes ^b,c   Salamo, G J ^b  

^a University of Arkansas   (United States)

^b UNIVERSITY OF ARKANSAS   (United States)

^c UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Indium compounds; Infrared detectors; Infrared measurements; Quantum dots

Indexed keywords

ELECTRIC POTENTIAL; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

INFRARED MEASUREMENTS; REVERSE BIAS VOLTAGE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 26444456025     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.854392     Document Type: Article

References (11)

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