Effects of ambient and dissolved oxygen concentration in ultrapure water on initial growth of native oxide on a silicon (100) surface

Journal of the Electrochemical Society

Volumn 152, Issue 8, 2005, Pages

  Li, Fuhe ^a   Balazs, Marjorie K ^a   Anderson, Scott ^a  

^a Balazs Analytical Services   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDUCTIVELY COUPLED PLASMA; MASS SPECTROMETRY; MONOLAYERS; SILICON WAFERS;

DRY ATMOSPHERES; OXYGEN CONCENTRATION; SILICON SURFACES; ULTRACLEANING;

OXYGEN;

EID: 25644456000     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1946487     Document Type: Article

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