Epitaxial growth of anthracene single crystals on graphite (0 0 0 1) substrate with physical vapor growth technique

Surface Science

Volumn 592, Issue 1-3, 2005, Pages 37-41

  Jo, Sadaharu ^a   Yoshikawa, Hitoshi ^a   Fujii, Akane ^a   Takenaga, Mitsuru ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Aromatics; Epitaxy; Graphite; Growth; Interface state; Metal semiconductor interfaces; Morphology; Roughness and topography; Stepped single crystal surfaces; Surface structure

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; MORPHOLOGY; PHYSICAL VAPOR DEPOSITION; SINGLE CRYSTALS; SURFACE ROUGHNESS;

AROMATICS; INTERFACE STATE; METAL-SEMICONDUCTOR INTERFACES; ROUGHNESS AND TOPOGRAPHY; STEPPED SINGLE CRYSTAL SURFACES;

GRAPHITE;

EID: 25444506159     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.06.098     Document Type: Article

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