Optimization of InAsSb photodetector for non-cryogenic operation in the mid-infrared range

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 4, 2005, Pages 647-651

  Ait Kaci H ^a   Nieto, J ^a   Rodriguez, J B ^a   Grech, P ^a   Chevrier, F ^a   Salesse, A ^a   Joullie A ^a   Christol, P ^a  

^a UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENIC OPERATIONS; DETECTION; MID-INFRARED RANGE; NOISE-INDUCED CURRENT;

DIFFUSION; INDUCED CURRENTS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; PHOTODIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; STRUCTURE (COMPOSITION);

INFRARED DETECTORS;

EID: 25444476971     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460456     Document Type: Conference Paper

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