Terahertz generation by plasma waves in nanometer gate high electron mobility transistors

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 4, 2005, Pages 656-659

  LUsakowski J ^a,b   Teppe, F ^a   Dyakonova, N ^a   Meziani, Y M ^a   Knap, W ^a,c   Parenty, T ^d   Bollaert, S ^d   Cappy, A ^d   Popov, V ^e   Shur, M S ^c  

^a CNRS   (France)

^b UNIVERSITY OF WARSAW   (Poland)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^d INSTITUT D ELECTRONIQUE   (France)

^e RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SIGNALS; NANOMETERS; TERAHERTZ GENERATION; THRESHOLD VALUES;

ELECTRIC POTENTIAL; ELECTRON GAS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MAGNETIC FIELDS; NATURAL FREQUENCIES; RADIATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TUNING;

PLASMA WAVES;

EID: 25444449254     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460468     Document Type: Conference Paper

References (7)

1. M. Dyakonov and M. S. Shur, Phys. Rev. Lett. 71, 2465 (1993).
2. W. Knap, J. Łusakowski, T. Parenty, S. Bollaert, A. Cappy, V. V. Popov, and M. S. Shur, Appl. Phys. Lett. 84, 2331 (2004).
3. T. Parenty, S. Bollaert, J. Mateos, X. Wallart, and A. Cappy, Proceedings of Indium Phosphide and Related Material (IPRM) Conference (Nara Japan, May 2001) pp. 626-629.
4. W. Knap, D. Dur, A. Raymond, C. Meny, J. Leotin, S. Huant, and B. Etienne, Rev. Sci. Instrum. 63, 3293 (1992).
5. A. C. Beer, Galvanomagnetic Effects in Semiconductors, Solid State Phys., Suppl. 4 (1963).
6. Y. M. Meziani, J. Łusakowski, F. Teppe, N. Dyakonova, W. Knap, K. Romanjek, M. Ferrier, R. Clerc, G. Ghibaudo, F. Boeuf, and T. Skotnicki, Proc. ESSDERC, Leuven (2004).
7. A. Satou, Semicond. Sci. Technol. 18, 460 (2003).