In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: Influence of metal diffusion on the film morphology and on the growth rate

Thin Solid Films

Volumn 458, Issue 1-2, 2004, Pages 1-8

  Loreti, S ^a   Santoni, A ^a   Lancok, J ^b   Menicucci, I ^a   Minarini, C ^c   Della Sala, D ^d  

^a ENEA   (Italy)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c ENEA CR Portici   (Italy)

^d ENEA C R CASACCIA   (Italy)

Author keywords

Metal induced crystallization; Polycrystalline silicon; Scanning electron microscopy

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; EUTECTICS; LASER BEAM EFFECTS; MICROELECTRONICS; POLYSILICON; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

LASER ANNEALING (LA); LOW-PRESSURE CHEMICAL VAPOUR DEPOSITION (LPCVD); METAL-INDUCED CRYSTALLIZATION; SOLID-PHASE CRYSTALLIZATION (SPC);

THIN FILMS;

EID: 2542493119     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.038     Document Type: Article

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